Learn from the
accomplished professors
Dr. Nisha Chugh
Assistant Professor
Area of Specialization
Modeling and Simulation of Semiconductor Devices and Circuits specifically III-V (GaN) Devices. Fabrication and Experimental study of such high-performance devices, FPGA, 2D Semiconductor Materials and Devices
Dr. Nisha Chugh is currently working as an Assistant professor in Vivekananda Institute of Professional Studies-Technical Campus, School of Engineering & Technology. She received her PhD degree (Full time) in Semiconductor Devices (Microelectronics) being a JRF/SRF in DRDO sponsored research project from Guru Gobind Singh Indraprastha University, Dwarka, Delhi. She obtained her Master’s degree in Electronics and Communication Engineering from MDU, Rohtak. She completed her bachelor’s degree in ECE from MDU, Rohtak. She has a total teaching experience of 9+ years. She has more than 15 publications in her record in the area of high power and high frequency Gallium Nitride (GaN) HEMTs along with other III-V compound semiconductors. She had been a training and placement in-charge in her previous academic organisation and also got actively involved in industrial relations. She is a reviewer of peer reviewed journals and conferences. Her core industrial experience had been in FPGA and currently she is working with hardware description language-based projects on AMD hardware.
PUBLICATIONS (Peer Reviewed International Journals)
- Nisha Chugh, Subhasis Haldar, Monika Bhattacharya and R.S. Gupta; “Potential and Electric field Analysis of Field Plated AlGaN/GaN HEMT for High Voltage Applications Using 2-D Analytical Approach”, Microelectronics Journal (Elsevier), Vol. 138, pp. 105857, Aug. 2023. eISSN: 0026-2692. https://doi.org/10.1016/j.mejo.2023.105857 (SCIE IF-1.99)
- Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R.S. Gupta; “Microwave Performance Assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of Scattering Parameters and various power gains” Microsystem Technologies (SPRINGER), Vol. 29, pp. 847-856, June 2023. eISSN:1432-1858. https://10.1007/s00542-023-05477-y (SCI IF-2.276)
- Nisha Chugh, Manoj Kumar, Subhasis Haldar, Monika Bhattacharya and R.S. Gupta; “Applicability of Field plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications”, Silicon (SPRINGER), Vol. 14, pp. 1029-38, Jan. 2021. eISSN:1876-9918. https://doi.org/10.1007/s12633-020-00881-9 (SCIE IF-2.67)
- Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R.S. Gupta; “Extraction of Admittance Parameters of Symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for Microwave Frequency Applications” Microsystem Technologies (SPRINGER), Vol. 27, pp. 4065-4072, Mar.2020. eISSN:1432-1858. https://doi.org/10.1007/s00542-020-04805 (SCI IF-2.276)
- Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R.S. Gupta; “Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and microwave Frequency Applications” Semiconductors (SPRINGER), Vol. 53, No. 13, pp. 1784-91, Dec. 2019. eISSN:1090-6479 https://doi.org/10.1134/S1063782619130050 (SCI IF-0.7)
- Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R.S. Gupta; “Sheet Carrier Concentration and Current-Voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N Double Hetero-structure HEMT Incorporating the Effect of Traps” Microsystem Technologies (SPRINGER), Vol. 28, pp. 665-674, Jan. 2019. eISSN:1432-1858. https://doi.org/10.1007/s00542-019-04322-5 (SCI IF-2.276)
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar, S.S Deswal and R.S. Gupta; “Polarization Dependent Charge Control Model for Microwave Performance Assessment of AlGaN/GaN/AlGaN Double Heterostructure HEMT”, Journal of Computational Electronics (SPRINGER), Vol. 17, No. 3, pp.1229-40, May 2018. eISSN:1572-8137. https://doi.org/10.1007/s10825-018-1190-0 (SCIE IF-1.983)
International Conferences
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “Evaluation of Scattering Parameters and Unilateral Power Gain for AlGaN/GaN/AlGaN DH-HEMT for Microwave Frequency Applications”, 4th International Conference on Energy Systems, Drives and Automations (ESDA-2021), Kolkata, West Bengal, India, Dec. 2021-AWARDED BEST PAPER CERTIFICATE.
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “Impact of donor layer thickness, doping concentration and gate-width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications”; 2018 IEEE Electron Device Kolkata Conference (EDKCON-2018), Kolkata, Nov. 2018. https://doi.org/10.1109/EDKCON.2018.8770426
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “Impact of donor-layer doping & thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double Heterostructure and Single-Heterostructure HEMT”; 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON- 2018), Gorakhpur (U.P.), Nov. 2018. https://doi.org/10.1109/UPCON.2018.8596967
- Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R.S. Gupta; “Modeling of Threshold Voltage and Sheet Carrier Concentration of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N Double Heterostructure HEMT Incorporating the Effect of Traps” Proceedings of 5th International Conference on Microelectronics, Circuits and Systems (MICRO-2018), Bhubaneswar (Orrisa), May, 2018.
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “RF Performance comparison of Dual Material Gate (DMG) and Conventional AlGaN/GaN High Electron Mobility Transistor” 4th IEEE International Conference on Circuits, Devices and Systems- ICDCS-2018, Coimbatore (Tamil Nadu), March 2018. https://doi.org/10.1109/ICDCSSyst.2018.8605122
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “Impact of Temperature and Al composition on the threshold voltage and sheet carrier concentration of AlmGa1-mN/GaN/AlmGa1-mN Double Heterostructure HEMT’, Springer Proceedings of ‘The Physics of Semiconductor Devices’- in XIX International Workshop on The Physics of Semiconductor Devices (IWPSD- 2017), IIT Delhi (Delhi), Dec. 2017.
- Nisha Chugh, Monika Bhattacharya, Manoj Kumar and R.S. Gupta; “Sheet Carrier Concentration and Threshold Voltage Modeling of Asymmetrically Doped AlGaN/GaN/AlGaN Double Heterostructure HEMT” 4th IEEE International Conference on Electrical, Computer and Electronics (UPCON-2017), Mathura (U.P.), pp.446-451, Oct. 2017. https://doi.org/10.1109/UPCON.2017.8251089